Electro-thermal coupling analysis methodology for RF circuits

Authors:
Didac GóMez;CéDric Dufis;Josep Altet;Diego Mateo;José Luis GonzáLez
Affiliations:
Electronic Engineering Department, Universitat Politècnica de Catalunya, Jordi Girona 1-3, Edifici C4 Campus Nord, 08034 Barcelona, Spain;Electronic Engineering Department, Universitat Politècnica de Catalunya, Jordi Girona 1-3, Edifici C4 Campus Nord, 08034 Barcelona, Spain;Electronic Engineering Department, Universitat Politècnica de Catalunya, Jordi Girona 1-3, Edifici C4 Campus Nord, 08034 Barcelona, Spain;Electronic Engineering Department, Universitat Politècnica de Catalunya, Jordi Girona 1-3, Edifici C4 Campus Nord, 08034 Barcelona, Spain;Electronic Engineering Department, Universitat Politècnica de Catalunya, Jordi Girona 1-3, Edifici C4 Campus Nord, 08034 Barcelona, Spain
Venue:
Microelectronics Journal
Year:
2012

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Abstract

In this paper an electro-thermal co-simulation methodology suitable for RF circuits is presented. It circumvents traditional transient simulation drawbacks that arise when signals or magnitudes whose frequencies are separated orders of magnitude are present simultaneously in the simulated circuit. The accuracy of the proposed technique is verified experimentally by comparing simulation and measurements of the thermal coupling between an integrated power amplifier (PA) and a differential temperature sensor embedded in the same silicon die, using a 65nm CMOS technology.