Contribution to the modeling of a non-ideal Sigma-Delta modulator

Authors:
Abdelghani Dendouga;Nour-Eddine Bouguechal;Souhil Kouda;Samir Barra;Brahim Lakehal
Affiliations:
Advanced Electronics Laboratory, University of Batna, Batna, Algeria 05000 and Microelectronic and Nanotechnology Division, Centre de Développement des Technologies Avancées (CDTA), Algi ...;Advanced Electronics Laboratory, University of Batna, Batna, Algeria 05000;Advanced Electronics Laboratory, University of Batna, Batna, Algeria 05000;Advanced Electronics Laboratory, University of Batna, Batna, Algeria 05000;Advanced Electronics Laboratory, University of Batna, Batna, Algeria 05000
Venue:
Journal of Computational Electronics
Year:
2012

Citing 1
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Abstract

One major issue facing the design and the simulation of complex circuits, such as Sigma-Delta modulators (ΣΔM), is the relatively large computing-time; required when using transistor level based simulators. Hence, high-level system modeling is suitable to achieve a time-efficient IC design.In this scope, the aim of the present work is to develop an enhanced model for a switched-capacitor second order sigma delta modulator. Besides the numerous effects, already included in the standard models, many additional non-idealities aspects have been taken into consideration. Namely, the DC nonlinearity behavior of both: the operational amplifier (OP-AMP) and the switches ON-resistance. The obtained model permits, thus, more accurate prediction of the relative signal-to-noise ratio (SNR), compared to the standard one.