Single-electron shift-register circuit

Authors:
Marilia De Oliveira Telles;Janaina GonçAlves GuimarãEs
Affiliations:
Department of Electrical Engineering, University of Brasília, P.O. Box 4386, Brasília, DF 70904-970, Brazil;Department of Electrical Engineering, University of Brasília, P.O. Box 4386, Brasília, DF 70904-970, Brazil
Venue:
Microelectronics Journal
Year:
2013

Citing 8
Cited 0

Considerations about Nanoelectronic GSI Processors

Analog Integrated Circuits and Signal Processing - Special issue on analog nano-electronics
Nanoelectronic single-electron transistor circuits and architectures: Research Articles

International Journal of Circuit Theory and Applications - Nanoelectric Circuits
Design and Simulation of NAND Gates Made of Single Electron Devices

PCI '08 Proceedings of the 2008 Panhellenic Conference on Informatics
Design, Simulation and Performance Evaluation of a NAND Based Single-electron 2-4 Decoder

DSD '09 Proceedings of the 2009 12th Euromicro Conference on Digital System Design, Architectures, Methods and Tools
Low Power Single Electron Or/Nor Gate Operating at 10GHz

ISVLSI '10 Proceedings of the 2010 IEEE Annual Symposium on VLSI
Single electron encoded latches and flip-flops

IEEE Transactions on Nanotechnology
SIMON-A simulator for single-electron tunnel devices and circuits

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Design and simulation of novel TLG-SET based configurable logic cells

Microelectronics Journal

Quantified Score

Hi-index	0.00

Visualization

Abstract

This work presents a 4-bit shift-register designed with single-electron tunneling devices. Firstly, a single-electron D flip-flop based on NAND gates was designed and simulated. Based on D flip-flops, the shift-register architecture was also designed and successfully simulated at room temperature. Some considerations about noise margin were made. Moreover, stability analyses for the SET NAND, SET D flip-flop and SET shift-register were carried out.