Flash Memories
An Adaptive Striping Architecture for Flash Memory Storage Systems of Embedded Systems
RTAS '02 Proceedings of the Eighth IEEE Real-Time and Embedded Technology and Applications Symposium (RTAS'02)
On efficient wear leveling for large-scale flash-memory storage systems
Proceedings of the 2007 ACM symposium on Applied computing
A log buffer-based flash translation layer using fully-associative sector translation
ACM Transactions on Embedded Computing Systems (TECS)
Endurance enhancement of flash-memory storage systems: an efficient static wear leveling design
Proceedings of the 44th annual Design Automation Conference
Proceedings of the 14th international conference on Architectural support for programming languages and operating systems
Rejuvenator: A static wear leveling algorithm for NAND flash memory with minimized overhead
MSST '11 Proceedings of the 2011 IEEE 27th Symposium on Mass Storage Systems and Technologies
Process Variations and Probabilistic Integrated Circuit Design
Process Variations and Probabilistic Integrated Circuit Design
Optimizing NAND flash-based SSDs via retention relaxation
FAST'12 Proceedings of the 10th USENIX conference on File and Storage Technologies
Error patterns in MLC NAND flash memory: measurement, characterization, and analysis
DATE '12 Proceedings of the Conference on Design, Automation and Test in Europe
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As the program/erase (P/E) cycles of flash memory keep decreasing, improving the lifetime/endurance of flash memory has become a fundamental issue in the design of flash devices. This work is motivated by the observation that flash blocks endured the same P/E cycles usually have different bit error rates. In contrast to the existing wear-leveling techniques that try to distribute erases to flash blocks as evenly as possible, we propose an efficient reliability-aware wear-leveling scheme to distribute block erases based on the bit error rates of blocks so as to even out the error rate among flash blocks, to maximize the number of good blocks, and thus to ultimately prolong the lifetime of flash storage devices. The experiments were conducted based on representative realistic workloads to evaluate the efficacy of the proposed scheme, for which the results are very encouraging.