3D-Stacked Memory Architectures for Multi-core Processors
ISCA '08 Proceedings of the 35th Annual International Symposium on Computer Architecture
Architecture design exploration of three-dimensional (3D) integrated DRAM
ISQED '09 Proceedings of the 2009 10th International Symposium on Quality of Electronic Design
An efficient distributed memory interface for many-core platform with 3D stacked DRAM
Proceedings of the Conference on Design, Automation and Test in Europe
System-level power/performance evaluation of 3D stacked DRAMs for mobile applications
Proceedings of the Conference on Design, Automation and Test in Europe
Pinned to the walls: impact of packaging and application properties on the memory and power walls
Proceedings of the 17th IEEE/ACM international symposium on Low-power electronics and design
System and circuit level power modeling of energy-efficient 3D-stacked wide I/O DRAMs
Proceedings of the Conference on Design, Automation and Test in Europe
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Energy efficiency is the key driver for the design optimization of System-on-Chips for mobile terminals (smartphones and tablets). 3D integration of heterogeneous dies based on TSV (through silicon via) technology enables stacking of multiple memory or logic layers and has the advantage of higher bandwidth at lower energy consumption for the memory interface. In this work we propose a highly energy efficient DRAM subsystem for next-generation 3D integrated SoCs, which will consist of a SDR/DDR 3D-DRAM controller and an attached 3D-DRAM cube with a fine-grained access and a very flexible (WIDE-IO) interface. We implemented a synthesizable model of the SDR/DDR 3D-DRAM channel controller and a functional model of the 3D-stacked DRAM which embeds an accurate power estimation engine. We investigated different DRAM families (WIDE IO DDR/SDR, LPDDR and LPDDR2) and densities that range from 256Mb to 4Gb per channel. The implementation results of the proposed 3D-DRAM subsystem show that energy optimized accesses to the 3D-DRAM enable an overall average of 37% power savings as compared to standard accesses. To the best of our knowledge this is the first design of a 3D-DRAM channel controller and 3D-DRAM model featuring co-optimization of memory and controller architecture.