Design of Analog CMOS Integrated Circuits
Design of Analog CMOS Integrated Circuits
Detectors, bandpass nonlinearities, and their optimization: Inversion of the Chebyshev transform
IEEE Transactions on Information Theory
Analog Integrated Circuits and Signal Processing
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In this paper single-parameter models are presented for the instantaneous characteristics of electronic circuits/systems exhibiting even-symmetry nonlinearities. The models can easily provide closed-form expressions, in terms of the ordinary Bessel functions, for the amplitudes of the second-harmonic and second-order intermodulation components at the output of the nonlinear circuit/system excited by a multisinusoidal input signal. Moreover, by combining the proposed models with the previously published models for instantaneous characteristics exhibiting odd-symmetry nonlinearities, a new method and apparatus are proposed for characterizing nonlinear circuits/systems exhibiting both even- and odd-symmetry nonlinearities. The proposed method and apparatus use the amplitudes of the measured output second- and third-order intermodulation components resulting from a two-tone equal-amplitude input signal.