BAG: a designer-oriented integrated framework for the development of AMS circuit generators

  • Authors:
  • J. Crossley;A. Puggelli;H.-P. Le;B. Yang;R. Nancollas;K. Jung;L. Kong;N. Narevsky;Y. Lu;N. Sutardja;E. J. An;A. L. Sangiovanni-Vincentelli;E. Alon

  • Affiliations:
  • University of California, Berkeley;University of California, Berkeley;University of California, Berkeley;University of California, Berkeley;University of California, Berkeley;University of California, Berkeley;University of California, Berkeley;University of California, Berkeley;University of California, Berkeley;University of California, Berkeley;University of California, Berkeley;University of California, Berkeley;University of California, Berkeley

  • Venue:
  • Proceedings of the International Conference on Computer-Aided Design
  • Year:
  • 2013

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Abstract

We introduce BAG, the Berkeley Analog Generator, an integrated framework for the development of generators of Analog and Mixed Signal (AMS) circuits. Such generators are parameterized design procedures that produce sized schematics and correct layouts optimized to meet a set of input specifications. BAG extends previous work by implementing interfaces to integrate all steps of the design flow into a single environment and by providing helper classes -- both at the schematic and layout level -- to aid the designer in developing truly parameterized and technology-independent circuit generators. This simplifies the codification of common tasks including technology characterization, schematic and testbench translation, simulator interfacing, physical verification and extraction, and parameterized layout creation for common styles of layout. We believe that this approach will foster design reuse, ease technology migration, and shorten time-to-market, while remaining close to the classical design flow to ease adoption. We have used BAG to design generators for several circuits, including a Voltage Controlled Oscillator (VCO) and a Switched-Capacitor (SC) voltage regulator in a CMOS 65nm process. We also present results from automatic migration of our designs to a 40nm process.