A low-power differential injection-locked frequency divider with output power flatness in 0.5µm E/D-mode GaAs PHEMT

  • Authors:
  • Fan-Hsiu Huang;Yue-Ming Hsin

  • Affiliations:
  • -;-

  • Venue:
  • Microelectronics Journal
  • Year:
  • 2013

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Abstract

This study implemented an injection-locked frequency divider (ILFD) on Ka-band millimeter-wave communication systems in 0.5@mm enhancement/depletion-mode (E/D-mode) GaAs PHEMT technology. The ILFD presents a low-power design based on the differential-injection circuit topology without using any injectors. Compared with the conventional single-injection ILFD circuits, the proposed ILFD exhibits output power flatness and wide locking range characteristics with a power consumption of 0.9mW under a 0.4V supply. The self-oscillation frequency was chosen to be 20GHz for divided-by-2 operation. The measured locking range is approximately 11.5GHz ranging from 32.5GHz to 44GHz when the injection power level is 5dBm. The locking range exhibiting a 3dB power roll-off characteristic at output is 10.5GHz ranging from 33GHz to 42.5GHz.