CMOS front end components for micropower RF wireless systems

  • Authors:
  • Tsung-Hsien Lin;Henry Sanchez;Razieh Rofougaran;William J. Kaiser

  • Affiliations:
  • Electrical Engineering Department, University of California, Los Angeles;Electrical Engineering Department, University of California, Los Angeles;Electrical Engineering Department, University of California, Los Angeles;Electrical Engineering Department, University of California, Los Angeles

  • Venue:
  • ISLPED '98 Proceedings of the 1998 international symposium on Low power electronics and design
  • Year:
  • 1998

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Abstract

New applications have recently appeared for a low power, low cost, “embedded radio”. These wireless interfaces for handheld mobile nodes and Wireless Integrated Network Sensors (WINS) must provide spread spectrum signaling for multi-user operation at 902-928 MHz. Cost considerations motivate the development of complete micropower CMOS RF systems operating at previously unexplored low power levels. Micropower CMOS VCO and mixer circuits, developed for these emerging narrow-band communication systems, are reported here. Design methods combining high-Q inductors and weak inversion MOSFET operation enable the lowest reported operating power for RF front end components including a voltage-controlled oscillator (VCO) and mixer operating at frequencies of 400 MHz — 1 GHz. In addition, the VCO, by virtue of its high-Q inductive components, displays the lowest reported phase noise for 1 GHz CMOS VCO system for any power dissipation.