Wireless telecom silicon integration: analog design for radio, baseband and speech spectrum
Wireless Networks - Special issue VLSI in wireless networks
CMOS front end components for micropower RF wireless systems
ISLPED '98 Proceedings of the 1998 international symposium on Low power electronics and design
Design and performance analysis of double-gate MOSFET over single-gate MOSFET for RF switch
Microelectronics Journal
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There is increasing interest in the use of CMOS circuits for high frequency highly integrated wireless telecommunications systems. This paper presents the results of on-going work into the development of a cell library that includes many of the circuit elements required for the high frequency sub-systems of communications integrated circuits. The cell library studied included an RF control element, single ended Class A amplifier, RF isolator, and Gilbert cell mixer circuit topologies. Circuit design criteria and measurement results are presented. All cells were fabricated using standard 2.0, 1.2, and 0.8 μm CMOS integrated circuit fabrication processes with no post-processing performed. The results indicate that 2.0 μm CMOS can be used successfully up to approximately 250 MHz with 0.8 μm cells useful up to approximately 1000 MHz.