A CMOS Quadrature Baseband Frequency Synthesizer/Modulator

  • Authors:

  • Marko Kosunen;Jouko Vankka;Mikko Waltari;Lauri Sumanen;Kimmo Koli;Kari Halonen

  • Affiliations:

  • Electronic Circuit Design Laboratory, Helsinki University of Technology, P.O. Box 3000, FIN-02015 HUT, Finland. E-mail: mak@clara.hut.fi;Electronic Circuit Design Laboratory, Helsinki University of Technology, P.O. Box 3000, FIN-02015 HUT, Finland. E-mail: mak@clara.hut.fi;Electronic Circuit Design Laboratory, Helsinki University of Technology, P.O. Box 3000, FIN-02015 HUT, Finland. E-mail: mak@clara.hut.fi;Electronic Circuit Design Laboratory, Helsinki University of Technology, P.O. Box 3000, FIN-02015 HUT, Finland. E-mail: mak@clara.hut.fi;Electronic Circuit Design Laboratory, Helsinki University of Technology, P.O. Box 3000, FIN-02015 HUT, Finland. E-mail: mak@clara.hut.fi;Electronic Circuit Design Laboratory, Helsinki University of Technology, P.O. Box 3000, FIN-02015 HUT, Finland. E-mail: mak@clara.hut.fi

  • Venue:
  • Analog Integrated Circuits and Signal Processing - Special issue on selected papers from the 1997 NORCHIP conference
  • Year:
  • 1999

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Abstract

A quadrature baseband frequency synthesizer/modulator IC has been designed and fabricated in a 0.5 μm CMOS. This quadrature baseband frequency synthesizer/modulator is intended for use in a wide variety of indoor/outdoor portable wireless applications in the 2.4–2.4835 GHz ISM frequency band. This frequency synthesizer/modulator is a capable of frequency and phase modulation. The major components are: a quadrature direct digital synthesizer, digital-to-analog converters and lowpass filters. By programming the quadrature direct digital synthesizer, adaptive channel bandwidths, modulation formats, frequency hopping and data rates are easily achieved. The quadrature baseband direct digital synthesizer produces an 80 MHz frequency band. The quadrature baseband spectrum could be upconverted with off-chip mixers into the 2.4 GHz ISM frequency band. The chip has a complexity of 17,803 transistors with a die area of 24 mm^2 and a core area of 9 mm^2. The power dissipation is 496 mW at 3.3 V.