A low-power high-performance current-mode multiport SRAM

  • Authors:
  • Muhammad M. Khellah;Mohamed I. Elmasry

  • Affiliations:
  • Intel Corp., Hillsboro, OR;Univ. of Waterloo, Waterloo, Canada

  • Venue:
  • IEEE Transactions on Very Large Scale Integration (VLSI) Systems
  • Year:
  • 2001

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Abstract

This paper presents a new approach for energy reduction and speedimprovement of multiport SRAMs. The key idea is to use current-modefor both read and write operations. To toggle a memory cell,a very small voltage swing is first created on the high-capacitivebit lines. This voltage is then translated into a differentialcurrent being injected into the cell, which in turn allowscomplementary potential to be developed on the cell nodes. Ascompared to the conventinal write approach, spice simulations usinga 0.35-μm CMOS process have shown 2.8 to 9.9× in energysavings and 1.02 to 6.36 × reduction in delay, for memorysizes of 32 to 1 K words. We also present a current-modesense-amplifier that operates in a similar fashion as the writecircuit. The design and implementation of a pipelined 32 × 64three-port register file utilizing the proposed technique isdescribed. Measurements of the register file chip have confirmedthe feasibility of this approach.