Analysis of Manufacturability Factors for AnalogCMOS ADC Building Blocks
Analog Integrated Circuits and Signal Processing
Some aspects of adaptive grid technology related to boundary and interior layers
Journal of Computational and Applied Mathematics - Special issue: Proceedings of the international conference on boundary and interior layers - computational and asymptotic methods (BAIL 2002)
International Journal of High Performance Computing Applications
Monotone iterative method for numerical solution of nonlinear ODEs in MOSFET RF circuit simulation
Mathematical and Computer Modelling: An International Journal
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From the Publisher:This book presents for the first time a unified treatment of the physical processes, mathematical models and numerical techniques for circuit, device and process simulation. At the macroscopic level, linear and nonlinear circuit elements are introduced to yield a mathematical model of an integrated circuit. Numerical techniques used to solve this coupled system of one-dimensional equations are described. Microscopically, current flow within a transistor is modeled using the drift-diffusion and hydrodynamic partial differential equations systems. Finite difference and finite element methods for spatial discretizations are treated, as are grid generation and refinement and multilevel schemes. At the fabrication level, physical processes such as diffusion, oxidation and crystal growth are modeled using reaction, diffusion, convection equations. These models require multistep integration techniques and Krylov projection methods for successful implementation. Exercises, programming assignments and an extensive bibliography are included.