Some aspects of adaptive grid technology related to boundary and interior layers

  • Authors:

  • Graham F. Carey;M. Anderson;B. Carnes;B. Kirk

  • Affiliations:

  • ICES, The University of Texas, Austin, TX;ICES, The University of Texas, Austin, TX;ICES, The University of Texas, Austin, TX;ICES, The University of Texas, Austin, TX

  • Venue:
  • Journal of Computational and Applied Mathematics - Special issue: Proceedings of the international conference on boundary and interior layers - computational and asymptotic methods (BAIL 2002)
  • Year:
  • 2004

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Abstract

We consider the use of adaptive mesh strategies for solution of problems exhibiting boundary and interior layer solutions. As the presence of these layer structures suggests, reliable and accurate solution of this class of problems using finite difference, finite volume or finite element schemes requires grading the mesh into the layers and due attention to the associated algorithms. When the nature and structure of the layer is known, mesh grading can be achieved during the grid generation by specifying an appropriate grading function. However, in many applications the location and nature of the layer behavior is not known in advance. Consequently, adaptive mesh techniques that employ feedback from intermediate grid solutions are an appealing approach. In this paper, we provide a brief overview of the main adaptive grid strategies in the context of problems with layers. Associated error indicators that guide the refinement feedback control/grid optimization process are also covered and there is a brief commentary on the supporting data structure requirements. Some current issues concerning the use of stabilization in conjunction with adaptive mesh refinement (AMR), the question of "pollution effects" in computation of local error indicators, the influence of nonlinearities and the design of meshes for targeted optimization of specific quantities are considered. The application of AMR for layer problems is illustrated by means of case studies from semiconductor device transport (drift diffusion), nonlinear reaction-diffusion, layers due to surface capillary effects, and shockwaves in compressible gas dynamics.