Design methods of electron beam sensitive devices in NMOS and CMOS technologies

  • Authors:

  • D. Micollet;B. Courtois

  • Affiliations:

  • -;-

  • Venue:
  • Microelectronic Engineering
  • Year:
  • 1988

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Abstract

This paper presents the basics for the design of electron beam sensitive devices intended to be used for the controllability of integrated circuits. For each part of the devices, different solutions are proposed and compared to allow the best choice. Two methods are detailed for further assemblings in electron beam sensitive devices.