Effectiveness of reverse body bias for leakage control in scaled dual Vt CMOS ICs
ISLPED '01 Proceedings of the 2001 international symposium on Low power electronics and design
Low-Voltage Embedded-RAM Technology: Present and Future
VLSI-SOC '01 Proceedings of the IFIP TC10/WG10.5 Eleventh International Conference on Very Large Scale Integration of Systems-on/Chip: SOC Design Methodologies
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This paper describes ultralow-voltage RAM technology for stand-alone and embedded memories in terms of signal-to-noise-ratio designs of RAM cells and subthreshold-current reduction. First, structures and areas of current DRAM and SRAM cells are discussed. Next, low-voltage peripheral circuits that have been proposed so far are reviewed with focus on subthreshold-current reduction, speed variation, on-chip voltage conversion, and testing. Finally, based on the above discussion, a perspective is given with emphasis on needs for high-speed simple non-volatile RAMs, new devices/circuits for reducing active-mode leakage currents, and memory-rich SOC architectures.