A novel parallel adaptive Monte Carlo method for nonlinear Poisson equation in semiconductor devices

Authors:
Yiming Li;Hsiao-Mei Lu;Ting-Wei Tang;S. M. Sze
Affiliations:
National Nano Device Laboratories, Microelectronics and Information Systems Research Center, National Chiao Tung University, Hsinchu 300, Taiwan;Institute of Statistics, National Tsing Hua University, Hsinchu 300, Taiwan;Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA;National Nano Device Laboratories, Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
Venue:
Mathematics and Computers in Simulation - Special issue: 3rd IMACS seminar on Monte Carlo methods - MCM 2001
Year:
2003

Citing 4
Cited 5

Semiconductor equations

Semiconductor equations
A Monte Carlo method for Poisson's equation

Journal of Computational Physics
A floating random-walk algorithm for extracting electrical capacitance

Mathematics and Computers in Simulation - IMACS sponsored Special issue on the second IMACS seminar on Monte Carlo methods
Perspectives on technology and technology-driven CAD

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

A Pattern-Based Domain Partition Approach to Parallel Optical Proximity Correction in VLSI Designs

IPDPS '05 Proceedings of the 19th IEEE International Parallel and Distributed Processing Symposium (IPDPS'05) - Workshop 13 - Volume 14
A parallel adaptive finite volume method for nanoscale double-gate MOSFETs simulation

Journal of Computational and Applied Mathematics - Special issue: Selected papers of the international conference on computational methods in sciences and engineering (ICCMSE-2003)
Process-variation- and random-dopants-induced threshold voltage fluctuations in nanoscale planar MOSFET and bulk FinFET devices

Microelectronic Engineering
Discrete-dopant-induced timing fluctuation and suppression in nanoscale CMOS circuit

IEEE Transactions on Circuits and Systems II: Express Briefs
A parallel adaptive finite volume method for nanoscale double-gate MOSFETs simulation

Journal of Computational and Applied Mathematics - Special issue: Selected papers of the international conference on computational methods in sciences and engineering (ICCMSE-2003)

Quantified Score

Hi-index	0.00

Visualization

Abstract

We present a parallel adaptive Monte Carlo (MC) algorithm for the numerical solution of the nonlinear Poisson equation in semiconductor devices. Based on a fixed random walk MC method, 1-irregular unstructured mesh technique, monotone iterative method, a posterior error estimation method, and dynamic domain decomposition algorithm, this approach is developed and successfully implemented on a 16-processors (16-PCs) Linux-cluster with message-passing interface (MPI) library. To solve the nonlinear problem with MC method, monotone iterative method is applied in each adaptive loop to obtain the final convergent solution. This approach fully exploits the inherent parallelism of the monotone iterative as well as MC methods. Numerical results for p-n diode and MOSFET devices are demonstrated to show the robustness of the method. Furthermore, achieved parallel speedup and related parallel performances are also reported in this work.