Principles of Optimal Page Replacement
Journal of the ACM (JACM)
A simple linear model of demand paging performance
Communications of the ACM
The working set model for program behavior
Communications of the ACM
AN EXPERIMENTAL ANALYSIS OF PROGRAM REFERENCE PATTERNS IN THE MULTICS VIRTUAL MEMORY
AN EXPERIMENTAL ANALYSIS OF PROGRAM REFERENCE PATTERNS IN THE MULTICS VIRTUAL MEMORY
Characterizing the Storage Process and Its Effect on the Update of Main Memory by Write Through
Journal of the ACM (JACM)
Bibliography on paging and related topics
ACM SIGOPS Operating Systems Review
Locality approximation using time
Proceedings of the 34th annual ACM SIGPLAN-SIGACT symposium on Principles of programming languages
A component model of spatial locality
Proceedings of the 2009 international symposium on Memory management
Program locality analysis using reuse distance
ACM Transactions on Programming Languages and Systems (TOPLAS)
Is reuse distance applicable to data locality analysis on chip multiprocessors?
CC'10/ETAPS'10 Proceedings of the 19th joint European conference on Theory and Practice of Software, international conference on Compiler Construction
A higher order theory of locality
Proceedings of the 2012 ACM SIGPLAN Workshop on Memory Systems Performance and Correctness
Cache Conscious Task Regrouping on Multicore Processors
CCGRID '12 Proceedings of the 2012 12th IEEE/ACM International Symposium on Cluster, Cloud and Grid Computing (ccgrid 2012)
| Hi-index | 0.00 |
Set associative page mapping algorithms have become widespread for the operation of cache memories for reasons of cost and efficiency. In this paper we show how to calculate analytically the effectiveness of set associative paging relative to full associative (unconstrained mapping) paging. For two miss ratio models, Saltzer's linear model and a mixed geometric model, we are able to obtain simple, closed form expressions for the relative LRU fault rates. Trace driven simulations are used to verify the accuracy of our results. We suggest that as electronically accessed third level memories, such as electron beam memories, magnetic bubbles or charge coupled devices become available, algorithms currently used only for cache paging will be applied to main memory, for the same reasons of efficiency, implementation ease and cost.