A New Lateral SiGe-Base PNM Schottky Collector Bipolar Transistor on SOI for Non-saturating VLSI Logic Design

  • Authors:

  • M. Jagadesh Kumar;D. Venkateshrao

  • Affiliations:

  • -;-

  • Venue:
  • VLSID '03 Proceedings of the 16th International Conference on VLSI Design
  • Year:
  • 2003

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Abstract

A novel bipolar transistor structure, namely, SiGe baselateral PNM Schottky Collector Bipolar Transistor(SCBT) in Silicon-On-Insulator (SOI) substrate isexplored using two-dimensional (2-D) simulation. Basedon a comparison with its equivalent PNP HBT, wedemonstrate for the first time that the proposed SiGebase lateral PNM transistor exhibits a superiorperformance in terms of high current gain and cut-offfrequency, reduced collector resistance, negligiblereverse recovery time and suppressed Kirk effect.