Application-Based, Transistor-Level Full-Chip Power Analysis for 700 MHz PowerPC(tm) Microprocessor

  • Authors:
  • Affiliations:
  • Venue:
  • ICCD '00 Proceedings of the 2000 IEEE International Conference on Computer Design: VLSI in Computers & Processors
  • Year:
  • 2000

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Abstract

With increasing operating frequency and high packing density in start-of-the-art VLSI/ULSI design, power analysis is vital to ensure normal chip operation and better reliability. One of the most serious concerns because of high power is the dramatic on-chip temperature rise and the degraded chip performance. A CMOS digital circuit always consumes power no matter if it is switching or stable. Its four power consumption elements are: dynamic switch power, short-circuit power, internal power, and leakage power. Great deals of research efforts have been spent on the estimation of those power elements [1] [2] [3]. All four elements need to be estimated for the maximum accuracy in power analysis.