A Robust 130 nm-CMOS Built-In Current Sensor Dedicated to RF Applications
Journal of Electronic Testing: Theory and Applications
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The aim is the design of an IDDX sensor integrated within the Circuit Under Test (CUT). Its function is transparent because its power consumption does not affect the behavior of the CUT. This transducer is fast, accurate, linear and small for its possible duplication in the CUT. It does not need a specific power supply, and this power supply should be cut to inhibit the IDD function whenever the CUT is in normal use. In response to a Heaveside signal, a rise time lower than 1ns was chosen. The desired IDD range is 0 to 10mA. This work is not a new approach of fault detection but shows the application of new means for static and dynamic measurements of IDD.