A Robust 130 nm-CMOS Built-In Current Sensor Dedicated to RF Applications

Authors:
M. Cimino;H. Lapuyade;M. Matos;T. Taris;Y. Deval;J. B. Bégueret
Affiliations:
IMS Laboratory, University of Bordeaux1, Talence, France;IMS Laboratory, University of Bordeaux1, Talence, France;IMS Laboratory, University of Bordeaux1, Talence, France;IMS Laboratory, University of Bordeaux1, Talence, France;IMS Laboratory, University of Bordeaux1, Talence, France;IMS Laboratory, University of Bordeaux1, Talence, France
Venue:
Journal of Electronic Testing: Theory and Applications
Year:
2007

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Abstract

In this paper we present a design methodology that allows a dramatic reduction of the dependency on process variation, yielding to a new version of this BICS. Taking advantage of a 130 nm VLSI CMOS technology, the proposed BICS has a peak-to-peak dispersion lower than 10% of its output full-scale range. It makes it more suitable to implement the test functionality while maintaining the initial BICS intrinsic performances. The built-in self-test methodology is illustrated by monitoring the supply current of Low-Noise Amplifiers (LNAs). Measurements confirm the BICS's transparency relative to the circuit-under-test (CUT) and its accuracy.