On the adequate transistor modeling for optimal design of CMOS OTA
SBCCI '05 Proceedings of the 18th annual symposium on Integrated circuits and system design
Power constrained design optimization of analog circuits based on physical gm/ID characteristics
SBCCI '06 Proceedings of the 19th annual symposium on Integrated circuits and systems design
High abstraction level CAD tool implementation of MOS drain current models
Microelectronics Journal
| Hi-index | 0.00 |
Abstract: The ACM model is a powerful tool for the simulation of MOS transistors. Unlike most of the available models, it presents simple and precise equations, allied to a small number but meaningful Physical parameters. This article presents a simplified methodology for extracting the parameters of the ACM model. Unlike usual methods for device characterization, which require the availability of expensive equipment, this methodology is based on simulation. Simple and low cost, it can be reproduced easily by those who plan to use the ACM model but do not know its parameters for a given process. In this work, the ACM parameters were extracted from the BSIM 3 parameters available for a 0.8 µm technology.