High abstraction level CAD tool implementation of MOS drain current models

Authors:
William Prodanov;Maurizio Valle
Affiliations:
Department of Biophysical and Electronic Engineering, University of Genova, Via Opera Pia, 11A, Genova 16145, GE, Italy;Department of Biophysical and Electronic Engineering, University of Genova, Via Opera Pia, 11A, Genova 16145, GE, Italy
Venue:
Microelectronics Journal
Year:
2009

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Abstract

This paper presents a toolbox in which a compact high abstraction level formulation of the MOS drain current was implemented. The formulation is based on the popular ACM compact MOS model: the approximations introduced in the model preserve the drain-to-source device symmetry and the continuity between all regions of operation (i.e. weak, moderate and strong inversion). The technological parameters involved in the formulation are obtained by means of a fully automatic extraction procedure. Finally, a detailed case study, in which a behavioural analysis of sample-and-hold circuits using the proposed toolbox is performed, is presented. The ATMEL^(R)0.24@mm CMOS process was used as reference for the case study. The MATLAB^(R) environment was used to implement the drain current model formulation, the technological parameters extraction and the case study as well.