Molecular cluster based nanoelectronics

  • Authors:

  • E. S. Soldatov;S. P. Gubin;I. A. Maximov;G. B. Khomutov;V. V. Kolesov;A. N. Sergeev-Cherenkov;V. V. Shorokhov;K. S. Sulaimankulov;D. B. Suyatin

  • Affiliations:

  • Faculty of Physics, M.V. Lomonosov Moscow State University, Vorob'evy Gory, 119992 Moscow, Russia;N.S. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, 119991, Moscow, Russia;Lund University, Solvegatan 14 A, S-223 62 Lund, Sweden;Faculty of Physics, M.V. Lomonosov Moscow State University, Vorob'evy Gory, 119992 Moscow, Russia;Institute of Radioengineering and Electronics, Russian Academy of Sciences, 103907, Moscow, Russia;Faculty of Physics, M.V. Lomonosov Moscow State University, Vorob'evy Gory, 119992 Moscow, Russia;Faculty of Physics, M.V. Lomonosov Moscow State University, Vorob'evy Gory, 119992 Moscow, Russia;Institute of Chemistry and Chemical Technology, National Academy of Sciences, 720071, Bishkek, Kyrgyzstan;Faculty of Physics, M.V. Lomonosov Moscow State University, Vorob'evy Gory, 119992 Moscow, Russia

  • Venue:
  • Microelectronic Engineering - Proceedings of the symposium and summer school on: Nano and Giga challenges in microelectronics research and opportunities in Russia
  • Year:
  • 2003

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Abstract

The use of molecular clusters as a basis of molecular single-electronic systems is considered experimentally and theoretically. The Langmuir-Blodgett formation and scanning tunneling microscope study of structures with chemically different cluster molecules is described. I-V curves and control curves of molecular single-electron transistors based on various single molecules were studied at room temperature. Comparison of experimental I-V curves with simulated ones allows us to identify a regime of slow energy relaxation of electrons in experimental transistors. Experimental study of electron transport through the planar molecular nanosystems has shown a correlated character of electron tunneling in such systems.