Single-electron devices

Authors:
Haroon Ahmed;Kazuo Nakazato
Affiliations:
Microelectronics Research Centre and Hitachi Cambridge Laboratory, Cavendish Laboratory, Madingley Road, Cambridge CB3 0HE, UK;Microelectronics Research Centre and Hitachi Cambridge Laboratory, Cavendish Laboratory, Madingley Road, Cambridge CB3 0HE, UK
Venue:
Microelectronic Engineering - Special issue on nanotechnology
Year:
1996

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Abstract

The basic principles of single-electron charging effects are explained. The fabrication of island and tunnel junction structures in which single-electron devices can be realised is described. Structures based on metals, GaAs/AlGaAs heterointerfaces, @d-doped GaAs, silicon and silicon-on-insulator have been considered and some of the applications of single electronics such as the current standard and the single electron memory are described in this review.