Line edge roughness detection using deep UV light scatterometry
Microelectronic Engineering
A multi-resolution approach for line-edge roughness detection
Microelectronic Engineering
Process variation-aware test for resistive bridges
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
A review of line edge roughness and surface nanotexture resulting from patterning processes
Microelectronic Engineering
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Different techniques are available to describe line edge roughness (LER). Besides the standard deviation (σ), the spatial frequency components can be resolved using the power spectral density. Experiments show that LER can be described using a two-parameter model based on a first-order autoregressive process. In the model a correlation length and σ are determined to explain LER effects in the range up to several µm. Experiments are presented in which the model is verified and a physical background for the two constraints is given. A chemical model of the formation of the LER is presented. The impact of this model on the LER and critical dimension variation description as defined by the ITRS roadmap is determined.