Analytical Study of Impact Ionization and Subthreshold Current in Submicron n-MOSFET

  • Authors:

  • Bhavana Jharia;S. Sarkar;R. P. Agarwal

  • Affiliations:

  • Indian Institute of Technology, India;Indian Institute of Technology, India;Indian Institute of Technology, India

  • Venue:
  • ISQED '05 Proceedings of the 6th International Symposium on Quality of Electronic Design
  • Year:
  • 2005

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Abstract

In this paper Effect of impact ionization in subthreshold operation of an n-MOSFET is studied. Analysis shows that the effect of impact ionization cannot be neglected in subthreshold region of operation of submicron MOSFET. This effect is enhanced at larger drain voltages. Gate bias and oxide thickness controls the effect of impact ionization. The effect of impact ionization is through the gate and drain bias dependence of the maximum electric field. Subthreshold current increases when gate oxide is thinned. This is because of the increase in impact ionization due to increase in electric field.