New non-volatile FPGA concept using Magnetic Tunneling Junction

Authors:
Nicolas Bruchon;Lionel Torres;Gilles Sassatelli;Gaston Cambon
Affiliations:
LIRMM, Cedex, France;LIRMM, Cedex, France;LIRMM, Cedex, France;LIRMM, Cedex, France
Venue:
ISVLSI '06 Proceedings of the IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures
Year:
2006

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Abstract

This paper describes a real time reconfigurable (RTR) micro- FPGA using new non volatile memory. Magnetic tunneling junctions (MTJ) used in Magnetic random access memories (MRAM) are compatible with classical CMOS processes. Moreover remanent property of such a memory could limit configuration time and power consumption required at each power up of the device. Each configuration memory point has to be readable independently from each other, which makes this approach radically different from the classical memory array one.