The design of an SRAM-based field-programmable gate array—part I: architecture
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
A novel synthesis approach for active leakage power reduction using dynamic supply gating
Proceedings of the 42nd annual Design Automation Conference
New non-volatile FPGA concept using Magnetic Tunneling Junction
ISVLSI '06 Proceedings of the IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures
Proceedings of the conference on Design, automation and test in Europe
Computing with nanoscale memory: Model and architecture
NANOARCH '09 Proceedings of the 2009 IEEE/ACM International Symposium on Nanoscale Architectures
FPGA-RR: an enhanced FPGA architecture with RRAM-based reconfigurable interconnects (abstract only)
Proceedings of the ACM/SIGDA international symposium on Field Programmable Gate Arrays
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Research efforts to develop a novel memory technology that combines the desired traits of non-volatility, high endurance, high speed and low power have resulted in the emergence of Spin Torque Transfer-RAM (STTRAM) as a promising next generation universal memory. However, the prospect of developing a non-volatile FPGA framework with STTRAM exploiting its high integration density remains largely unexplored. In this paper, we propose a novel CMOS-STTRAM hybrid FPGA framework; identify the key design challenges; and propose optimization techniques at circuit, architecture and application mapping levels. Simulation results show that a STTRAM based optimized FPGA framework achieves an average improvement of 48.38% in area, 22.28% in delay and 16.1% in dynamic power for ISCAS benchmark circuits over a conventional CMOS based FPGA design.