Highly efficient room-temperature tunnel spin injector using CoFe/MgO(001)

  • Authors:
  • X. Jiang;R. Wang;R. M. Shelby;S. S. P. Parkin

  • Affiliations:
  • -;-;-;-

  • Venue:
  • IBM Journal of Research and Development - Spintronics
  • Year:
  • 2006

Quantified Score

Hi-index 0.00

Visualization

Abstract

Semiconductor spintronics is a promising technology in which the spin states of electrons are utilized as an additional degree of freedom for device operation. One of its prerequisites is the ability to inject spin-polarized electrons into semiconductors. An overview is presented of recent progress in spin injection using an injector based on a crystalline CoFe/MgO(001) tunnel structure. The spin polarization of the electrons that were injected into a GaAs quantum-well light-emitting diode was inferred from electroluminescence polarization from the quantum well. Spin polarizations of 57% at 100 K and 47% at room temperature were obtained. The spin polarization was found to exhibit a strong dependence on bias and temperature, which can be explained on the basis of spin relaxation within the GaAs.