Magnetic tunnel junctions fabricated at tenth-micron dimensions by electron beam lithography
Proceedings of the international conference on Micro- and nanofabrication
Design considerations for MRAM
IBM Journal of Research and Development - Spintronics
Two-level BEOL processing for rapid iteration in MRAM development
IBM Journal of Research and Development - Spintronics
Rapid-turnaround characterization methods for MRAM development
IBM Journal of Research and Development - Spintronics
Single-domain model for toggle MRAM
IBM Journal of Research and Development - Spintronics
Spin angular momentum transfer in current-perpendicular nanomagnetic junctions
IBM Journal of Research and Development - Spintronics
Spintronics: a retrospective and perspective
IBM Journal of Research and Development - Spintronics
Highly efficient room-temperature tunnel spin injector using CoFe/MgO(001)
IBM Journal of Research and Development - Spintronics
Embedded DRAM: technology platform for the Blue Gene/L chip
IBM Journal of Research and Development
Spintronics: a retrospective and perspective
IBM Journal of Research and Development - Spintronics
Clocking structures and power analysis for nanomagnet-based logic devices
ISLPED '07 Proceedings of the 2007 international symposium on Low power electronics and design
Design of a spintronic arithmetic and logic unit using magnetic tunnel junctions
Proceedings of the 5th conference on Computing frontiers
On the use of magnetic RAMs in field-programmable gate arrays
International Journal of Reconfigurable Computing - Current Trends on Reconfigurable Computing
TAS-MRAM-Based Low-Power High-Speed Runtime Reconfiguration (RTR) FPGA
ACM Transactions on Reconfigurable Technology and Systems (TRETS)
Spin transfer torque (STT)-MRAM--based runtime reconfiguration FPGA circuit
ACM Transactions on Embedded Computing Systems (TECS)
Design of embedded MRAM macros for memory-in-logic applications
Proceedings of the 20th symposium on Great lakes symposium on VLSI
Spintronic memristor devices and application
Proceedings of the Conference on Design, Automation and Test in Europe
Proceedings of the 21st edition of the great lakes symposium on Great lakes symposium on VLSI
Performing bitwise logic operations in cache using spintronics-based magnetic tunnel junctions
Proceedings of the 8th ACM International Conference on Computing Frontiers
Emerging non-volatile memories: opportunities and challenges
CODES+ISSS '11 Proceedings of the seventh IEEE/ACM/IFIP international conference on Hardware/software codesign and system synthesis
Nanoscale electronic synapses using phase change devices
ACM Journal on Emerging Technologies in Computing Systems (JETC) - Special issue on memory technologies
Exploring the vulnerability of CMPs to soft errors with 3D stacked nonvolatile memory
ACM Journal on Emerging Technologies in Computing Systems (JETC)
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This paper reviews the remarkable developments of the magnetic tunnel junction over the last decade and in particular, work aimed at demonstrating its potential for a dense, fast, and nonvolatile random access memory. The initial focus is on the technological roots of the magnetic tunnel junction, and then on the recent progress made with engineered materials for this device. Following that, we discuss the development of the magnetic random access memory (MRAM) technology, in which the magnetic tunnel junction serves as both the storage device and the storage sensing device. The emphasis is on work at IBM, including demonstrations of basic capabilities of the technology and work on a 16-Mb "product demonstrator" design in 180-nm node technology, which was targeted to be a realistic test bed for the MRAM technology. Performance and cost are compared with those of competing technologies. The paper also serves as an introduction to more specialized papers in this issue on MRAM device physics, magnetic tunnel junction materials and device characterization, MRAM processing, and MRAM design.