IBM Journal of Research and Development - Spintronics
Spin angular momentum transfer in current-perpendicular nanomagnetic junctions
IBM Journal of Research and Development - Spintronics
Spin transfer torque (STT)-MRAM--based runtime reconfiguration FPGA circuit
ACM Transactions on Embedded Computing Systems (TECS)
Design of embedded MRAM macros for memory-in-logic applications
Proceedings of the 20th symposium on Great lakes symposium on VLSI
Design of MRAM based logic circuits and its applications
Proceedings of the 21st edition of the great lakes symposium on Great lakes symposium on VLSI
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As one of the most promising Spintronics applications, MRAM combines the advantages of high writing and reading speed, limitless endurance, and nonvolatility. The integration of MRAM in FPGAs allows the logic circuit to rapidly configure the algorithm, the routing and logic functions, and easily realize the Runtime Reconfiguration (RTR) and multicontext configuration. However, the conventional MRAM technology based on the Field Induced Magnetic Switching (FIMS) writing approach consumes very high power, large circuit surfaces, and produces high disturbance between memory cells. These drawbacks prevent FIMS-MRAM’s further development in memory and logic circuit. Thermally Assisted Switching (TAS)-based MRAM is then evaluated to address these issues. In this article, some design techniques, novel computing architecture, and logic components for FPGA logic circuits based on TAS-MRAM technology are presented. By using STMicroelectronics CMOS 90nm technology and a complete TAS-MTJ spice model, some chip characteristic results such as the programming latency (~25ns) and power dissipation (~124pJ) have been calculated or simulated to demonstrate the expected performance of TAS-MRAM-based FPGA logic circuits.