Spin angular momentum transfer in current-perpendicular nanomagnetic junctions
IBM Journal of Research and Development - Spintronics
Architecture of a Self-Checkpointing Microprocessor that Incorporates Nanomagnetic Devices
IEEE Transactions on Computers
TAS-MRAM-Based Low-Power High-Speed Runtime Reconfiguration (RTR) FPGA
ACM Transactions on Reconfigurable Technology and Systems (TRETS)
CMOS Digital Integrated Circuits Analysis & Design
CMOS Digital Integrated Circuits Analysis & Design
Spin transfer torque (STT)-MRAM--based runtime reconfiguration FPGA circuit
ACM Transactions on Embedded Computing Systems (TECS)
Design of embedded MRAM macros for memory-in-logic applications
Proceedings of the 20th symposium on Great lakes symposium on VLSI
CMOS VLSI Design: A Circuits and Systems Perspective
CMOS VLSI Design: A Circuits and Systems Perspective
Improving the Reliability of a FPGA Using Fault-Tolerance Mechanism Based on Magnetic Memory (MRAM)
RECONFIG '10 Proceedings of the 2010 International Conference on Reconfigurable Computing and FPGAs
A 64-Mb chain FeRAM with quad BL architecture and 200 MB/s burst mode
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
| Hi-index | 0.00 |
As the fabrication technology node shrinks down to 90nm or below, high standby power becomes one of the major critical issues for CMOS logic circuits due to the high leakage currents. A number of non-volatile storage technologies such as FRAM, MRAM, PCRAM and RRAM and so on, are under investigation to bring the non-volatility into the logic circuits and then eliminate completely the standby power issue. Thanks to its infinite endurance, high switching/sensing speed and easy 3D integration after CMOS process, MRAM is considered as the most promising one. Numerous logic circuits based on MRAM technology have been proposed and prototyped in the last years. In this paper, we present an overview and current status of these logic circuits and their potential applications in the future.