Design considerations for MRAM

Authors:
T. M. Maffitt;J. K. DeBrosse;J. A. Gabric;E. T. Gow;M. C. Lamorey;J. S. Parenteau;D. R. Willmott;M. A. Wood;W. J. Gallagher
Affiliations:
-;-;-;-;-;-;-;-;-
Venue:
IBM Journal of Research and Development - Spintronics
Year:
2006

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Abstract

MRAM (magnetic random access memory) technology, based on the use of magnetic tunnel junctions (MTJs) as memory elements, is a potentially fast nonvolatile memory technology with very high write endurance. This paper is an overview of MRAM design considerations. Topics covered include MRAM fundamentals, array architecture, several associated design studies, and scaling challenges. In addition, a 16-Mb MRAM demonstration vehicle is described, and performance results are presented.