High volume microprocessor test escapes, an analysis of defects our tests are missing
ITC '98 Proceedings of the 1998 IEEE International Test Conference
Functional Memory Faults: A Formal Notation and a Taxonomy
VTS '00 Proceedings of the 18th IEEE VLSI Test Symposium
MRAM Defect Analysis and Fault Modeli
ITC '04 Proceedings of the International Test Conference on International Test Conference
Design considerations for MRAM
IBM Journal of Research and Development - Spintronics
Magnetic Memory: Fundamentals and Technology
Magnetic Memory: Fundamentals and Technology
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Magnetic Random Access Memory (MRAM) is an emerging technology with the potential to become the universal on-chip memory. Among the existing MRAM technologies, the Thermally Assisted Switching (TAS) MRAM technology offers several advantages compared to the others technologies: selectivity, single magnetic field and integration density. As any other types of memory, TAS-MRAMs are prone to defects, so TAS-MRAM testing needs definitely to be investigated since only few papers can be found in the literature. In this paper we analyze the impact resistive-open defects on the heat current of a TAS-MRAM architecture. Electrical simulations were performed on a hypothetical 4x4 TAS-MRAM architecture enabling any read/write operations. Results show that W0 and/or W1 operations may be affected by the resistive-open defects. This study provides insights into the various types of TAS-MRAM defects and their behavior. As future work, we plan to utilize these analyses results to guide the test phase by providing effective test algorithm targeting fault related to actual defects that may affect TAS-MRAM architecture