Design Guides for a Correct DC Operation in RTD-based Threshold Gates

  • Authors:

  • Jose M. Quintana;Maria J. Avedillo;Juan Nunez

  • Affiliations:

  • Centro Nacional de Microelectrónica, Spain;Centro Nacional de Microelectrónica, Spain;Centro Nacional de Microelectrónica, Spain

  • Venue:
  • DSD '06 Proceedings of the 9th EUROMICRO Conference on Digital System Design
  • Year:
  • 2006

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Abstract

A correct DC operation is essential before analyzing other aspects of the circuit behavior. This paper analyzes how the presence of the HFET transistor modifies the DC operation of follower circuits based on MOBILE, and can prevent its correct operation. On the basis of this analysis, guidelines for the design of threshold gates which are implemented as a generalization of the follower circuit topology are derived.