Strategies for integration of donor electron spin qubits in silicon
Microelectronic Engineering
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The International Technology Roadmap for Semiconduc-tors (ITRS) seeks to stimulate invention and research lead-ing to one or more new nanoelectronics technologies that may extend functional scaling of information processing substantially beyond "ultimately scaled" CMOS. Introduction of such new technologies is envisioned in two phases - first by extending the CMOS platform via heterogeneous integration of new technologies and, later, via a replace-ment for CMOS that would provide the equivalent of sev-eral more technology nodes beyond ultimate CMOS. 1D charge state materials (nanotubes and nanowires) appear to be particularly attractive for the first phase. Ferromagnetic or spin-based logic devices are under investigation for the second phase. Some recent work in both of these areas will be presented.