Strategies for integration of donor electron spin qubits in silicon

  • Authors:

  • T. Schenkel;J. A. Liddle;J. Bokor;A. Persaud;S. J. Park;J. Shangkuan;C. C. Lo;S. Kwon;S. A. Lyon;A. M. Tyryshkin;I. W. Rangelow;Y. Sarov;D. H. Schneider;J. Ager;R. de Sousa

  • Affiliations:

  • E.O. Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA;E.O. Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA;E.O. Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA and Department of Electrical Engineering and Computer Science, University of California, Berkeley, Ca 94720, USA and The Molecul ...;E.O. Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA;E.O. Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA;E.O. Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA and Department of Electrical Engineering and Computer Science, University of California, Berkeley, Ca 94720, USA;Department of Electrical Engineering and Computer Science, University of California, Berkeley, Ca 94720, USA;The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, Ca 94720, USA;Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA;Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA;Institute of Microstructure Technologies and Analytics, University of Kassel, Germany;Institute of Microstructure Technologies and Analytics, University of Kassel, Germany;Lawrence Livermore National Laboratory, Livermore, CA 94550, USA;E.O. Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA;Department of Chemistry and Pfizer Center for Theoretical Chemistry, University of California, Berkeley, CA 94720, USA

  • Venue:
  • Microelectronic Engineering
  • Year:
  • 2006

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Abstract

Spins of electrons bound to donor electrons are attractive candidates for exploration of quantum information processing in silicon. We present results from our development of donor electron spin qubit structures. Donors are placed into isotopically enriched ^2^8Si by ion implantation. The coherence properties of donor implants in pre-device structures are probed by pulsed electron spin resonance (ESR). The spin de-coherence time, T"2, for ^1^2^1Sb donors implanted into a peak depth of 50nm from a thermal oxide interface is 0.3ms at 5K, increasing to 0.75ms when the silicon surface is passivated with hydrogen. A technique for formation of donor arrays by ion implantation with scanning force microscope alignment is presented, and we discuss coherence limiting factors with respect to the implementation of a single spin readout scheme.