A Data-Driven Statistical Approach to Analyzing Process Variation in 65nm SOI Technology

  • Authors:
  • Choongyeun Cho;Daeik Kim;Jonghae Kim;Jean-Olivier Plouchart;Daihyun Lim;Sangyeun Cho;Robert Trzcinski

  • Affiliations:
  • IBM;IBM;IBM;IBM;MIT;U. of Pittsburgh;IBM

  • Venue:
  • ISQED '07 Proceedings of the 8th International Symposium on Quality Electronic Design
  • Year:
  • 2007

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Abstract

This paper presents a simple yet effective method to analyze process variations using statistics on manufacturing in-line data without assuming any explicit underlying model for process variations. Our method is based on a variant of principal component analysis and is able to reveal systematic variation patterns existing on a die-to-die and wafer-to-wafer level individually. The separation of die variation from wafer variation can enhance the understanding of a nature of the process uncertainty. Our case study based on the proposed decomposition method shows that the dominating die-to-die variation and wafer-to-wafer variation represent 31% and 25% of the total variance of a large set of in-line parameters in 65nm SOI CMOS technology.