Simulation and fabrication of HF microelectromechanical bandpass filter

Authors:
Ching-Liang Dai;Ming-Chao Chiang;Ming Wei Chang
Affiliations:
Department of Mechanical Engineering, National Chung Hsing University, Taichung 402, Taiwan, ROC;Department of Mechanical Engineering, National Chung Hsing University, Taichung 402, Taiwan, ROC;Center for RFID Technology, Industrial Technology Research Institute, Hsinchu 310, Taiwan, ROC
Venue:
Microelectronics Journal
Year:
2007

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Abstract

A high-frequency (HF) micromechanical bandpass filter fabricated using the commercial 0.35@mm complementary metal oxide semiconductor (CMOS) process and the post-process has been investigated in this study. The area of the filter is about 150x200@mm^2. The filter is composed of two resonators, which are joined by a coupling beam. Each resonator contains a membrane, four supported beams and two fixed electrodes, and the membrane is supported by four supported beams. The filter requires a post-process to etch the sacrificial layer, and to release the suspended structures. The post-process needs only one wet etching to etch silicon dioxide layer. The filter contains a sensing part and a driving part. When applying a driving voltage to the driving part, the sensing part generates a change in capacitance. The capacitance variation of the sensing part is converted into the output voltage by a sensing circuitry. Experiments show that the filter has a center frequency of about 39.6MHz and a bandwidth of 330kHz.