A process and supply variation tolerant nano-CMOS low voltage, high speed, a/d converter for system-on-chip

  • Authors:
  • Dhruva Ghai;Saraju Mohanty;Elias Kougianos

  • Affiliations:
  • University of North Texas, Denton, TX, USA;University of North Texas, Denton, TX, USA;University of North Texas, Denton, TX, USA

  • Venue:
  • Proceedings of the 18th ACM Great Lakes symposium on VLSI
  • Year:
  • 2008

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Abstract

This paper presents a process variation tolerant, SoC ready, 1 GS/s, 6 bit flash analog-to-digital converter (ADC) suitable for integration into nanoscale digital CMOS technologies. The physical design is carried out with a generic 90 nm Salicide 1.2 V/2.5 V 1 Poly 9 Metal process design kit using Design for Manufacturability (DFM) methodologies. Post-layout simulation results at nominal supply and threshold voltages are presented. The parasitic-extracted physical design of the ADC has been simulated for a supply voltage variation of 10%, and threshold voltage mismatch of 5%. The results show maximum variations of 10.5% and 5.7% in the INL and DNL respectively, with nominal INL = 0.344 LSB and nominal DNL = 0.459 LSB, at a supply voltage of 1.2 V. The ADC consumes a peak power of 5.794 mW and an average power of 3.875 mW. The comparators used in the ADC have been designed using the threshold inverting technique.