Conditioning of the steady state semiconductor device problem
SIAM Journal on Applied Mathematics
An approximate Newton method for the solution of the basic semiconductor device equations
SIAM Journal on Numerical Analysis
The Stationary Current-Voltage Characteristics of the Quantum Drift-Diffusion Model
SIAM Journal on Numerical Analysis
Monotone iterative methods for the adaptive finite element solution of semiconductor equations
Journal of Computational and Applied Mathematics
Journal of Computational Physics
A quantum corrected energy-transport model for nanoscale semiconductor devices
Journal of Computational Physics
Quantum-corrected drift-diffusion models for transport in semiconductor devices
Journal of Computational Physics
An entropic quantum drift-diffusion model for electron transport in resonant tunneling diodes
Journal of Computational Physics
An accelerated algorithm for 2D simulations of the quantum ballistic transport in nanoscale MOSFETs
Journal of Computational Physics
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Approximations of quantum corrected energy-transport model with non-parabolic energy relaxation time
MAMECTIS/NOLASC/CONTROL/WAMUS'11 Proceedings of the 13th WSEAS international conference on mathematical methods, computational techniques and intelligent systems, and 10th WSEAS international conference on non-linear analysis, non-linear systems and chaos, and 7th WSEAS international conference on dynamical systems and control, and 11th WSEAS international conference on Wavelet analysis and multirate systems: recent researches in computational techniques, non-linear systems and control
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A non-stationary monotone iterative method is proposed and analyzed for the quantum-corrected energy transport model in nanoscale semiconductor device simulation. For the density-gradient equations, it is analytically and numerically shown that the convergence rate of the method is optimal in the sense of Gummel's decoupling iteration. This is a globally convergent method in the sense that the initial guess can be taken as a lower or an upper solution which is independent of applied voltages. The method integrates the monotone parameters, grid sizes, and Scharfetter-Gummel fitting in an adaptive and automatic way to treat the singularly perturbed nature of the model that incurs boundary, junction, and quantum potential layers in the device.