Two-dimensional exponential fitting and applications to drift-diffusion models
SIAM Journal on Numerical Analysis
Semiconductor equations
Numerical modeling of advanced semiconductor devices
IBM Journal of Research and Development
On Weak Residual Error Estimation
SIAM Journal on Scientific Computing
Object-oriented programming of adaptive finite element and finite volume methods
Applied Numerical Mathematics
SIAM Journal on Scientific Computing
Transport effects and characteristic modes in the modeling and simulation of submicron devices
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
A quantum corrected energy-transport model for nanoscale semiconductor devices
Journal of Computational Physics
An iterative method for finite-element solutions of the nonlinear Poisson-Boltzmann equation
ICCOMP'07 Proceedings of the 11th WSEAS International Conference on Computers
An accelerated monotone iterative method for the quantum-corrected energy transport model
Journal of Computational Physics
An iterative method for finite-element solutions of the nonlinear Poisson-Boltzmann equation
WSEAS Transactions on Computers
A fermi-statistics-based model for quantum semiconductor device simulations
ICCOMP'08 Proceedings of the 12th WSEAS international conference on Computers
An exponential-fitting method for the quantum corrected equations
MAMECTIS'09 Proceedings of the 11th WSEAS international conference on Mathematical methods, computational techniques and intelligent systems
Nonstationary monotone iterative methods for nonlinear partial differential equations
Journal of Computational and Applied Mathematics
Hi-index | 31.46 |
A self-adjoint formulation of the energy transport model of semiconductor devices is proposed. This new formulation leads to symmetric and monotonic properties of the resulting system of nonlinear algebraic equations from an adaptive finite element approximation of the model. A node-by-node iterative method is then presented for solving the system. This is a globally convergent method that does not require the assembly of the global matrix system and full Jacobian matrices. An adaptive algorithm implementing this method is described in detail to illustrate the main features of this paper, namely, adaptation, node-by-node calculation, and global convergence. Numerical results of simulations on deep-submicron diode and MOSFET device structures are given to demonstrate the accuracy and efficiency of the algorithm.