The quantum hydrodynamic model for semiconductor devices
SIAM Journal on Applied Mathematics
On Weak Residual Error Estimation
SIAM Journal on Scientific Computing
Object-oriented programming of adaptive finite element and finite volume methods
Applied Numerical Mathematics
The Stationary Current-Voltage Characteristics of the Quantum Drift-Diffusion Model
SIAM Journal on Numerical Analysis
SIAM Journal on Scientific Computing
Monotone iterative methods for the adaptive finite element solution of semiconductor equations
Journal of Computational and Applied Mathematics
Journal of Computational Physics
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Numerical methods for the hydrodynamic device model: subsonic flow
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
An entropic quantum drift-diffusion model for electron transport in resonant tunneling diodes
Journal of Computational Physics
An accelerated monotone iterative method for the quantum-corrected energy transport model
Journal of Computational Physics
A fermi-statistics-based model for quantum semiconductor device simulations
ICCOMP'08 Proceedings of the 12th WSEAS international conference on Computers
An exponential-fitting method for the quantum corrected equations
MAMECTIS'09 Proceedings of the 11th WSEAS international conference on Mathematical methods, computational techniques and intelligent systems
Nonstationary monotone iterative methods for nonlinear partial differential equations
Journal of Computational and Applied Mathematics
Approximations of quantum corrected energy-transport model with non-parabolic energy relaxation time
MAMECTIS/NOLASC/CONTROL/WAMUS'11 Proceedings of the 13th WSEAS international conference on mathematical methods, computational techniques and intelligent systems, and 10th WSEAS international conference on non-linear analysis, non-linear systems and chaos, and 7th WSEAS international conference on dynamical systems and control, and 11th WSEAS international conference on Wavelet analysis and multirate systems: recent researches in computational techniques, non-linear systems and control
A quantum energy transport model for semiconductor device simulation
Journal of Computational Physics
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An energy transport model coupled with the density gradient method as quantum mechanical corrections is proposed and numerically investigated. This new model is comprehensive in both physical and mathematical aspects. It is capable of describing hot electron transport as well as significant quantum mechanical effects for advanced devices with dimensions comparable to the de Broglie wave-length. The model is completely self-adjoint for all state variables and hence provides many appealing mathematical features such as global convergence, fast iterative solution, and highly parallelizable. Numerical simulations on diode and MOSFET with the gate length down to 34 nm using this model have been performed and compared with that using the classical transport model. It is shown that the I-V characteristics of this short-channel device is significantly corrected by the density-gradient equations with current drive reduced by up to 60% comparing with that of the classical model along. Moreover, a 2D quantum layer, which is only a fraction of the length scale of inversion layer, is also effectively captured by this new model with very fine mesh near the interface produced by an adaptive finite element method.