Two new low-power Full Adders based on majority-not gates
Microelectronics Journal
A high-speed and high-performance full adder cell based on 32-nm CNFET technology for low voltages
International Journal of High Performance Systems Architecture
| Hi-index | 0.00 |
Full-adders are the core element of the complex arithmetic circuits like addition, multiplication, division and exponentiation. Regarding to this importance, new idea and investigations for constructing full-adders are required. As far as related literature is concerned, generality and ease of use, as well as voltage and transistor scaling are considerable advantages of CMOS logic design versus other design style such as CPL specially when cell-based design are targeted. This paper proposes a novel, symmetric and efficient design for a CMOS 1-bit full-adder. Besides, another fully symmetric full-adder has been presented. Results and simulations demonstrate that the proposed design leads to an efficient full-adder in terms of power consumption, delay and area in comparison to a well-known conventional full-adder design. The post-layout simulations have been done by HSPICE with nanometer scale transistors considering all parasitic capacitors and resistors.