Nanoscale Triple Material Double Gate (TM-DG) MOSFET for Improving Short Channel Effects

Authors:
Pedram Razavi;Ali A. Orouji
Affiliations:
-;-
Venue:
ENICS '08 Proceedings of the 2008 International Conference on Advances in Electronics and Micro-electronics
Year:
2008

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Abstract

In this paper, a novel double-gate (DG) MOSFET in which the top and bottom gates consist of three laterally contacting material with different work functions is proposed. Using two-dimensional (2-D) device simulation, improvement of short channel effects such as drain-induced barrier lowering (DIBL), hot-carrier effects and channel length modulation (CLM) are investigated and compared with the dual material double-gate MOSFET and conventional DG MOSFET. This structure exhibits significantly improved short channel effects (SCEs) when compared with the conventional DG MOSFET.