Nanoscale Triple Material Double Gate (TM-DG) MOSFET for Improving Short Channel Effects
ENICS '08 Proceedings of the 2008 International Conference on Advances in Electronics and Micro-electronics
Modeling, verification and comparison of short-channel double gate and gate-all-around MOSFETs
Mathematics and Computers in Simulation
Accurate prediction of the volume inversion impact on undoped Double Gate MOSFET capacitances
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
Random variability modeling and its impact on scaled CMOS circuits
Journal of Computational Electronics
An effective potential approach to modeling 25 nm MOSFET devices
Journal of Computational Electronics
Journal of Computational Electronics
Cylindrical surrounding-gate MOSFETs with electrically induced source/drain extension
Microelectronics Journal
Design and performance analysis of double-gate MOSFET over single-gate MOSFET for RF switch
Microelectronics Journal
Analysis of double-gate CMOS for double-pole four-throw RF switch design at 45-nm technology
Journal of Computational Electronics
A Comparative Study of Electrical Characteristic on Sub-10-nm Double-Gate MOSFETs
IEEE Transactions on Nanotechnology
A New Capacitorless 1T DRAM Cell: Surrounding Gate MOSFET With Vertical Channel (SGVC Cell)
IEEE Transactions on Nanotechnology
Fabrication and Characterization of Gate-All-Around Silicon Nanowires on Bulk Silicon
IEEE Transactions on Nanotechnology
Quantum mechanical effects on the threshold voltage of surrounding-gate MOSFETs
Microelectronics Journal
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In this paper, we have analyzed the design parameters of Cylindrical Surrounding Double-Gate (CSDG) MOSFETs as an RF switch for the advanced wireless telecommunication systems. The proposed CSDG RF MOSFET is operated at the microwave regime of the spectrum. We emphasize on the basics of the circuit elements such as drain current, threshold voltage, resonant frequency, resistances at switch ON condition, capacitances, energy stored, cross talk and switching speed required for the integrated circuit of the radio frequency sub-system of the CSDG RF CMOS device and the physical significance of these basic circuit elements is also discussed. We observed that the total capacitance between the source to drain for the proposed CSDG MOSFET is more compared to the Cylindrical Surrounding Single-Gate (CSSG) MOSFET due to the greater drain current passing area of the CSDG MOSFET, which reveals that the isolation is better in the CSDG MOSFET compared to that of the simple double-gate MOSFET and single-gate MOSFET. We analyzed that the CSDG MOSFET stores more energy (1.4 times) as compared to the CSSG MOSFET. Therefore, the CSDG MOSFET has more stored energy. The ON-resistance of CSDG MOSFET is half than that of the double-gate MOSFET and single-gate MOSFET, which reveals that the current flow from source to drain in CSDG MOSFET is better than the double-gate MOSFET and single-gate MOSFET.