A Comparative Study of Electrical Characteristic on Sub-10-nm Double-Gate MOSFETs

Authors:
Y. Li;H. -M. Chou
Affiliations:
-;-
Venue:
IEEE Transactions on Nanotechnology
Year:
2005

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Abstract

We explore the structure effect on electrical characteristics of sub-10-nm double-gate metal–oxide–semiconductor field-effect transistors (DG MOSFETs). To quantitatively assess the nanoscale DG MOSFETs' characteristics, the on/off current ratio, subthreshold swing, threshold voltage$( V_ th)$, and drain-induced barrier-height lowering are numerically calculated for the device with different channel length ($L$) and the thickness of silicon film$( T_ si)$. Based on our two-dimensional density gradient simulation, it is found that, to maintain optimal device characteristics and suppress short channel effects (SCEs) for nanoscale DG MOSFETs,$ T_ si$should be simultaneously scaled down with respect to$L$. From a practical fabrication point-of-view, a DG MOSFET with ultrathin$ T_ si$will suppress the SCE, but suffers the fabrication process and on-state current issues. Simulation results suggest that$ L/ T_ si geq 1$may provide a good alternative in eliminating SCEs of double-gate-based nanodevices.