Effect of gate engineering in double-gate MOSFETs for analog/RF applications

Authors:
Angsuman Sarkar;Aloke Kumar Das;Swapnadip De;Chandan Kumar Sarkar
Affiliations:
Electronics & Communication Engineering Department, Kalyani Goverenment Engineering College, Kalyani, West Bengal 741235, India;Electronics & Communication Engineering Department, Kalyani Goverenment Engineering College, Kalyani, West Bengal 741235, India;Department of Electronics & Communication Engineering, Meghnad Saha Institute of Technology, Nazirabad, Kolkata, West Bengal 700107, India;Electronics & Telecommunication Department, Jadavpur University, Kolkata, West Bengal 700032, India
Venue:
Microelectronics Journal
Year:
2012

Citing 5
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Abstract

This work uncovers the potential benefit of fully-depleted short-channel triple-material double-gate (TM-DG) SOI MOSFET in the context of RF and analog performance characteristics. A systematic, quantitative investigation of the analog and RF performance figures-of-merits (FOMs) of TM-DG MOSFET are presented. The key idea in this paper is to demonstrate the improved RF, analog and linearity performance exhibited by TM-DG MOSFET over dual-material dual-gate (DM-DG) and conventional single-material double-gate (SM-DG) MOSFET. Using two-dimensional (2-D) device simulations, we have examined various design issues and provided the reasons for the improved performance. The effect of different length ratios of three channel regions related to three different gate materials of TM-DG structure on the RF and analog performance have also been discussed. Simulations reveal an improvement of intrinsic gain by 20.41% and 38.53%, an increase of 14.23% and 26.4% in the case of f"T, an increase of 13.9% and 23.85% in the case of f"m"a"x values for TM-DG (1:2:3) MOSFET compared to DM-DG and SM-DG MOSFET respectively. As a result, we demonstrate that TM-DG MOSFET can be a viable option to enhance the performance of SOI technology for high-frequency analog applications.